DMN3033LSN n-channel enhancement mode mosfet features ? low gate charge ? low r ds(on) : ? 30 m @v gs = 10v ? 40 m @v gs = 4.5v ? low input/output leakage ? lead free by design/rohs compliant (note 3) ? qualified to aec-q101 standards for high reliability ? "green" device (note 4) mechanical data ? case: sc-59 ? case material - molded plasti c, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.014 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v drain current (note 1) continuous t a = 25c t a = 70c i d 6 5 a pulsed drain current (note 2) i dm 24 a body-diode continuous current (note 1) i s 2.25 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit total power dissipation (note 1) p d 1.4 w thermal resistance, junction to ambient (note 1) t 10s r ja 90 c /w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. device mounted on 1"x1", fr-4 pc board with 2 oz. copper and test pulse width t 10s. 2. repetitive rating, pulse widt h limited by junction temperature. 3. no purposefully added lead. sc-59 top view e q uivalent circuit source gate drain d g s pin configuration product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition static parameters drain-source breakdown voltage bv dss 30 ? ? v i d = 250 a, v gs = 0v zero gate voltage drain current t j = 25 c t j = 55 c i dss ? ? 1 5 a v ds = 30v, v gs = 0v gate-body leakage current i gss ? ? 100 na v ds = 0v, v gs = 20v gate threshold voltage v gs ( th ) 1.0 ? 2.1 v v ds = v gs , i d = 250 a static drain-source on-resistance (note 5) r ds (on) ? 25 36 30 40 m v gs = 10v, i d = 6a v gs = 4.5v, i d = 5a forward transconductance (note 5) g fs ? 5 ? s v ds = 10v, i d = 8a diode forward voltage (note 5) v sd ? 0.7 1.1 v i s = 2.25a, v gs = 0v dynamic parameters (note 6) total gate charge q g ? 10.5 ? nc v gs = 5v, v ds = 15v, i d = 6a gate-source charge q g s ? 3.8 ? nc v gs = 10v, v ds = 15v, i d = 6a gate-drain charge q g d ? 2.9 ? nc v gs = 10v, v ds = 15v, i d = 6a turn-on delay time t d ( on ) ? 11 ? ns v dd = 15v, v gs = 10v, r d = 1.8 , r g = 6 turn-on rise time t r ? 7 ? ns turn-off delay time t d ( off ) ? 63 ? ns turn-off fall time t f ? 30 ? ns input capacitance c iss ? 755 ? pf v ds = 10v, v gs = 0v f = 1.0mhz output capacitance c oss ? 136 ? pf reverse transfer capacitance c rss ? 108 ? pf notes: 4. test pulse width t = 300ms. 5. guaranteed by design. not subject to production testing. DMN3033LSN product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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